Semiconductor device structure with stacked semiconductor dies

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor die and a second semiconductor die. The semiconductor device structure also includes a passivation layer between the first semiconductor die and the second semiconductor die, and the passivation layer is directly bonded to a second interlayer dielectric layer of the second semiconductor die. The semiconductor device structure further includes a conductive feature in via hole and directly bonded to a second conductive line of the second semiconductor die. The semiconductor device structure further includes a second barrier layer between the conductive feature and the passivation layer. The second barrier layer covers sidewalls of the conductive feature and a surface of the conductive feature closer to the first semiconductor die.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. The fabrication of semiconductor devices involvessequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers over a semiconductor substrate, andpatterning the various material layers using lithography and etchingprocesses to form circuit components and elements on the semiconductorsubstrate.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallows more components to be integrated into a given area. The number ofinput and output (I/O) connections is significantly increased. Smallerpackage structures, that utilize less area or smaller heights, aredeveloped to package the semiconductor devices. For example, in anattempt to further increase circuit density, three-dimensional (3D) ICshave been investigated.

New packaging technologies have been developed to improve the densityand functionality of semiconductor devices. These relatively new typesof packaging technologies for semiconductor devices face manufacturingchallenges.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1E are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIGS. 2A-2C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 3 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 4 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 5 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 6 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 7 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 8 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 9 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIGS. 10A-10D are cross-sectional views of various stages of a processfor forming a semiconductor device structure, in accordance with someembodiments.

FIG. 11 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments.

FIG. 12 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments.

FIGS. 13A-13C are cross-sectional views of various stages of a processfor forming a semiconductor device structure, in accordance with someembodiments.

FIG. 14 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. Additional operationscan be provided before, during, and/or after the stages described inthese embodiments. Some of the stages that are described can be replacedor eliminated for different embodiments. Additional features can beadded to the semiconductor device structure. Some of the featuresdescribed below can be replaced or eliminated for different embodiments.Although some embodiments are discussed with operations performed in aparticular order, these operations may be performed in another logicalorder.

FIGS. 1A-1E are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments. As shown inFIG. 1A, a substrate 10 is provided. In some embodiments, the substrate10 includes a semiconductor wafer, a portion of a semiconductor wafer,or a semiconductor die. The semiconductor wafer (such as a siliconwafer) may contain device elements such as active devices and/or passivedevices.

In some embodiments, the substrate 10 includes a semiconductor substrate100 and an interconnection structure formed on the semiconductorsubstrate 100, as shown in FIG. 1A. The interconnection structureincludes an interlayer dielectric layer 102 and multiple conductivefeatures including conductive lines 104, conductive vias (not shown),and conductive contacts 103. The interlayer dielectric layer 102includes multiple dielectric sub-layers. Multiple conductive featuressuch as contacts (such as the conductive contacts 103), conductive vias(not shown), and conductive lines (such as the conductive lines 104) areformed in the interlayer dielectric layer 102. Some of the conductivelines 104 may include wider portions. The wider portions may be used asconductive pads.

In some embodiments, barrier layers are formed between the conductivefeatures and the interlayer dielectric layer 102. For simplicity, onlysome of the barrier layers such as barrier layers 105 are shown in FIG.1A. Each of the barrier layers 105 covers sidewalls and a bottom surfaceof one of the conductive features 104. The barrier layers are alsobetween some of the conductive features. For example, some of thebarrier layers are formed between a conductive via and a conductive linethat are adjacent to each other. The barrier layers may be made of TiN,TaN, Ta, Ti, TiW, another suitable material, or a combination thereof.

The formation of the interconnection structure may involve multipledeposition, patterning, and planarization processes. The planarizationprocesses may include chemical mechanical polishing (CMP) processes. Insome embodiments, a planarization process is performed such that the topsurfaces of some of the conductive lines 104 are exposed andsubstantially coplanar with the top surface of the interlayer dielectriclayer 102. The conductive lines 104 that are exposed may also be calledtop metals. In some embodiments, one of the barrier layers 105 coversthe sidewalls and the bottom surface of one of the conductive features104, as shown in FIG. 1B.

In some embodiments, various device elements are formed in thesemiconductor substrate 100. Examples of the various device elementsinclude transistors (e.g., metal oxide semiconductor field effecttransistors (MOSFET), complementary metal oxide semiconductor (CMOS)transistors, bipolar junction transistors (BJT), high voltagetransistors, high frequency transistors, p-channel and/or n-channelfield effect transistors (PFETs/NFETs), etc.), diodes, or other suitableelements. Various processes may be used to form the various deviceelements, including deposition, etching, implantation, photolithography,annealing, and/or other suitable processes.

The device elements are interconnected through the interconnectionstructure over the semiconductor substrate 100 to form integratedcircuit devices. For example, one of the conductive lines 104 may beelectrically connected to a doped region formed in the semiconductorsubstrate 100 through some of the conductive vias, some other conductivelines 104, and one of the conductive contacts 103. The integratedcircuit devices include logic devices, memory devices (e.g., staticrandom access memories, SRAMs), radio frequency (RF) devices,input/output (I/O) devices, system-on-chip (SoC) devices, image sensordevices, other applicable types of devices, or a combination thereof.

As mentioned above, some of the conductive lines 104 form electricalconnections to the device elements formed in the semiconductor substrate100. However, it should be appreciated that embodiments of thedisclosure are not limited thereto. In some embodiments, one or moredummy lines 104′ are also formed in the interlayer dielectric layer 102,as shown in FIG. 1A. In FIG. 1A, only one of the dummy lines 104′ isshown. In some embodiments, the top surface of one of the dummy lines104′ is substantially coplanar with the top surfaces of some of theconductive lines 104 and the interlayer dielectric layer 102. In someembodiments, the dummy lines 104′ facilitate the planarizationoperations during the formation of the conductive lines 104. In someembodiments, the dummy lines 104′ facilitate a subsequent bondingprocess with another semiconductor substrate (such as a semiconductorwafer or a semiconductor die).

As shown in FIG. 1B, a passivation layer 106 is deposited over theinterlayer dielectric layer 102 and the conductive lines 104, inaccordance with some embodiments. In some embodiments, the passivationlayer 106 is deposited directly on the interlayer dielectric layer 102and the conductive lines 104. In some embodiments, the passivation layer106 includes multiple sub-layers. Each of the sub-layers of thepassivation layer 106 may be made of silicon oxide, silicon oxynitride,silicon nitride, borosilicate glass (BSG), phosphoric silicate glass(PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass(FSG), low-k material, another suitable material, or a combinationthereof. The passivation layer 106 may be deposited using a chemicalvapor deposition (CVD) process, an atomic layer deposition (ALD)process, a spin-on process, another applicable process, or a combinationthereof. In some embodiments, a planarization process is used to providethe passivation layer 106 with a substantially planar top surface. Insome other embodiments, the passivation layer 106 is a single layer.

Afterwards, via holes 107 are formed in the passivation layer 106, asshown in FIG. 1B in accordance with some embodiments. In someembodiments, the via holes 107 penetrate through the passivation layer106. In some embodiments, one of the via holes 107 exposes one of theconductive lines 104. In some embodiments, one of the via holes 107exposes one of the dummy lines 104′. In some embodiments, each of theconductive lines 104 exposed by the via holes 107 is wider than thecorresponding one of the via holes 107. In some embodiments, a directprojection of each of the via holes 107 on the plane where top surfacesof the conductive lines 104 are positioned is completely within theregion of the corresponding one of the conductive lines 104. The directprojection of each of the via holes 107 is completely positioned on thetop surface of the corresponding one of the conductive lines 104.

In some embodiments, a photolithography process and an etching processare used to form the via holes 107. In some embodiments, the sidewallsof the via holes 107 are substantially perpendicular to the top surfaceof the passivation layer 106. In some other embodiments, the via holes107 have slanted sidewalls. In some embodiments, each of the via holes107 gradually becomes wider along a direction extending from one of theconductive lines 104 towards the top surface of the passivation layer106. In some embodiments, each of the sidewalls of the via holes 107 asa whole has a uniform slope. In some embodiments, the via holes 107 areformed using only one photolithography process and only one etchingprocess.

In some embodiments, a barrier material layer is deposited over thepassivation layer 106 and the sidewalls and bottoms of the via holes107. The barrier material layer may be made of TiN, TaN, Ta, Ti, TiW,another suitable material, or a combination thereof. The barriermaterial layer may be deposited using a physical vapor deposition (PVD)process, a CVD process, an electroplating process, an electrolessplating process, another applicable process, or a combination thereof.

In some embodiments, a conductive material layer is then deposited overthe barrier material layer. The conductive material layer may be made ofcopper, aluminum, tungsten, gold, platinum, cobalt, another suitablematerial, or a combination thereof. The conductive material layer may bedeposited using an electroplating process, a CVD process, an electrolessplating process, a PVD process, another applicable process, or acombination thereof.

In some embodiments, a planarization process is then used to remove theportions of the barrier material layer and the conductive material layeroutside of the via holes 107. As a result, the remaining portions of thebarrier material layer and the conductive material layer in the viaholes 107 form barrier layers 109, conductive features 108, and one ormore dummy features 108′, as shown in FIG. 1B in accordance with someembodiments. In some embodiments, one of the barrier layers 109 coverssidewalls and a bottom surface of one of the conductive features 108, asshown in FIG. 1B.

In some embodiments, the conductive features 108 and the dummy features108′ are made of the same material. In FIG. 1B, only one of theconductive features 108 and one of the dummy features 108′ are shown. Insome embodiments, the top surface of the passivation layer 106 issubstantially coplanar with the top surface of the conductive features108 and the dummy features 108′.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the dummy features 108′ are not formed.In some embodiments, the dummy lines 104′ are not formed.

As shown in FIG. 1C, a substrate 20 is provided and flipped to be bondedonto the structure shown in FIG. 1B, in accordance with someembodiments. In some embodiments, the substrate 20 includes asemiconductor wafer, a portion of a semiconductor wafer, or asemiconductor die. The semiconductor wafer (such as a silicon wafer) maycontain device elements such active devices and/or passive devices.

In some embodiments, the substrate 20 includes a semiconductor substrate200 and an interconnection structure formed on the semiconductorsubstrate 200, as shown in FIG. 1C. The interconnection structures ofthe substrates 10 and 20 may be similar. The interconnection structureincludes an interlayer dielectric layer 202 and multiple conductivefeatures including conductive lines 204, conductive vias (not shown),and conductive contacts 203. Multiple conductive features such ascontacts (such as conductive contacts 203), conductive vias (not shown),and conductive lines (such as the conductive lines 204) are formed inthe interlayer dielectric layer 202. In some embodiments, barrier layers(such as barrier layers 205) are formed between the conductive featuresand the interlayer dielectric layer 202.

In some embodiments, various device elements are formed in thesemiconductor substrate 200. The device elements are interconnectedthrough the interconnection structure over the semiconductor substrate200 to form integrated circuit devices. For example, one of theconductive lines 204 may be electrically connected to a doped regionformed in the semiconductor substrate 200 through some of the conductivevias, some other conductive lines 204, and one of the conductivecontacts 203.

In some embodiments, one or more dummy lines 204′ are formed in theinterlayer dielectric layer 202. In FIG. 1C, only one of the dummy lines204′ is shown. In some embodiments, the top surface of one of the dummylines 204′ is substantially coplanar with the top surfaces of some ofthe conductive lines 204 and the interlayer dielectric layer 202.

As shown in FIG. 1D, the substrate 20 is bonded on the passivation layer106 such that the substrate 20 is in direct contact with the passivationlayer 106 and the conductive features 108, in accordance with someembodiments. In some embodiments, each of the conductive features 108 isdirectly bonded to a corresponding one of the conductive lines 204. Insome embodiments, each of the conductive features 108 is in directcontact with a corresponding one of the conductive lines 204. In someembodiments, the passivation layer 106 is directly bonded to theinterlayer dielectric layer 202. In some embodiments, the surfaces ofthe passivation layer 106, the conductive features 108, and interlayerdielectric layer 102 are substantially coplanar, as shown in FIG. 1D. Insome embodiments, surfaces of some of the conductive lines 104, theinterlayer dielectric layer 102, the barrier layer 105, and thepassivation layer 106 are substantially coplanar. In some embodiments,surfaces of the passivation layer 106, the conductive features 108, thebarrier layers 109, the interlayer dielectric layer 202, some of theconductive lines 204, and the barrier layers 205 are substantiallycoplanar.

In some embodiments, the substrate 20 and the substrate 10 are bondedtogether through a hybrid bonding. The hybrid bonding may include anoxide-to-oxide bonding and a metal-to-metal bonding. In someembodiments, the substrate 20 is placed over the passivation layer 106,the conductive features 108, and the dummy features 108′. As a result,the passivation layer 106 is in direct contact with (or directly bondedto) the interlayer dielectric layer 202, some of the conductive lines204, the barrier layers 205, and some of the dummy lines 204′. Theconductive features 108 are in direct contact with the conductive lines204, and the dummy features 108′ are in direct contact with the dummylines 204′. Afterwards, a heating operation may be used to achieve thehybrid bonding between these elements. During the hybrid bonding, thestructure shown in FIG. 1D may be heated at a temperature in a rangefrom about 300 degrees C. to about 450 degrees C.

In some embodiments, the substrates 10 and 20 are bonded togetherthrough the passivation layer 106, as shown in FIG. 1D. The conductivefeatures 108 form electrical connections between device elements formedin the semiconductor substrates 100 and 200. The dummy features 108′bond the dummy lines 104′ and 204′. In some embodiments, the formationof the conductive features 108 and the dummy features 108′ involves onlya single patterning process that is used for forming the via holes 107.The number of patterning processes is reduced. Therefore, thefabrication cost and time are significantly reduced.

In some embodiments, the passivation layer 106 is in direct contact withthe interlayer dielectric layers 102 and 202. In some embodiments, thereis no etch stop layer formed between the passivation layer 106 and theinterlayer dielectric layer 102 or between the passivation layer 106 andthe interlayer dielectric layer 202. In some embodiments, aplanarization process is used to thin the semiconductor substrate 200after the hybrid bonding process.

As shown in FIG. 1E, one or more through-substrate vias 286 are formedin the semiconductor substrate 200, in accordance with some embodiments.In FIG. 1D, only one of the through-substrate vias 286 is shown. In someembodiments, an insulating layer 287 is formed between one of thethrough-substrate vias 286 and the semiconductor substrate 200. In someembodiments, the semiconductor substrate 200 is thinned before theformation of the through-substrate vias 286. The semiconductor substrate200 may be thinned using a CMP process, a grinding process, an etchingprocess, another applicable process, or a combination thereof. Thesubsequent formation of the insulating layer 287 and thethrough-substrate vias 286 may be easier since the semiconductorsubstrate 200 is thinned.

In some embodiments, one of the through-substrate vias 286 iselectrically connected to one of the conductive contacts 203. In someembodiments, one of the through-substrate vias 286 is electricallyconnected to one of the device elements formed in the semiconductorsubstrate 100 through the conductive contacts 203. In some embodiments,one of the through-substrate vias 286 is electrically connected to oneof the conductive features 108 through some of the conductive featuresformed in the interlayer dielectric layer 202.

In some embodiments, the through-substrate vias 286 do not penetratethrough the interlayer dielectric layer 202. In some embodiments, eachthe conductive features 108 is wider than each of the through-substratevias 286. The through-substrate vias 286 do not occupy too large aregion of the semiconductor substrate 200. Therefore, more deviceelements can be formed in the semiconductor substrate 200.

Afterwards, a first passivation layer 290, a redistribution layer 288,and a second passivation layer 292 are formed over the semiconductorsubstrate 200 and the through-substrate vias 286, as shown in FIG. 1E inaccordance with some embodiments. In some embodiments, the first andsecond passivation layers 290 and 292 are made of silicon nitride,polyimide (PI), polybenzoxazole (PBO), another suitable material, or acombination thereof. In some embodiments, the redistribution layer 288is made of Cu, Al, W, Au, Ti, Pt, Co, another suitable material, or acombination thereof. In some embodiments, the redistribution layer 288is electrically connected to one of the through-substrate vias 286. Insome embodiments, the first passivation layer 290 includes multiplesub-layers. The second passivation layer 292 is patterned to form anopening that exposes the redistribution layer 288. The formation of thefirst passivation layer 290, the redistribution layer 288, and thesecond passivation layer 292 may involve multiple deposition,patterning, and planarization processes.

As shown in FIG. 1E, a conductive bump 296 is formed to fill the openingin the second passivation layer 292, in accordance with someembodiments. The conductive bump 296 is electrically connected to theredistribution layer 288. In some embodiments, the conductive bump 296is a solder bump. In some embodiments, an under bump metallization (UBM)layer 294 is formed over the sidewalls and bottom of the opening beforethe formation of the conductive bump 296. In some embodiments, the UBMlayer 294 includes chromium (Cr), copper (Cu), gold (Au), titanium (Ti),tungsten (W), another suitable material, or a combination thereof.

In some embodiments, two stack semiconductor wafers are bonded throughthe passivation layer 106 and the conductive features 108. In someembodiments, a dicing process is performed on the stacked semiconductorwafers to form multiple package structures (or semiconductor devicestructures) that are separated from each other. In some embodiments,FIG. 1E shows one of the package structures (or semiconductor devicestructures). In these cases, the substrates 10 and 20 are a firstsemiconductor die and a second semiconductor die, respectively.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the passivation layer and theconductive feature are formed on an upper semiconductor wafer. FIGS.2A-2C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

As shown in FIG. 2A, a passivation layer 206, one or more conductivefeatures 208, and one or more dummy features 208′ are formed on thesubstrate 20, in accordance with some embodiments. In FIG. 2A, only oneof the conductive features 208 and one of the dummy features 208′ areshown. In some embodiments, barrier layers (such as barrier layers 209)are formed between the passivation layer 206 and the conductive features208 or between the passivation layer 206 and the dummy features 208′. Insome embodiments, the materials and formation methods of the passivationlayer 206, the conductive features 208, the dummy features 208′, and thebarrier layers 209 are similar to those of the passivation layer 106,the conductive features 108, the dummy features 108′, and the barrierlayers 109. Similar to that shown in FIG. 1C, the substrate 20 isflipped to be bonded onto the substrate 10. In some embodiments, both ofthe substrates 10 and 20 are semiconductor wafers, and FIG. 2A merelyshows portions of the semiconductor wafers.

Similar to that shown in FIG. 1D, the substrate 20 is bonded onto thesubstrate 10 through the passivation layer 206, the conductive features208, and the dummy features 208′, as shown in FIG. 2B in accordance withsome embodiments. In some embodiments, the conductive features 208 aredirectly bonded to and in direct contact with corresponding conductivelines 104 of the substrate 10, as shown in FIG. 2B.

As shown in FIG. 2C, a passivation layer 270 and a pad structure 272 areformed, in accordance with some embodiments. In some embodiments, thepassivation layer 270 is made of silicon nitride, polyimide (PI),polybenzoxazole (PBO), another suitable material, or a combinationthereof. Afterwards, a photolithography process and an etching processare applied to form an opening that penetrates through the passivationlayer 270 and the semiconductor substrate 200. In some embodiments, theopening further extends into the interlayer dielectric layer 202 andexposes one of the conductive lines 204.

Afterwards, the pad structure 272 is formed in the opening toelectrically connect the exposed one of the conductive lines 204, asshown in FIG. 2C in accordance with some embodiments. In someembodiments, the pad structure 272 is made of aluminum, tungsten,nickel, copper, titanium, gold, platinum, another suitable material, ora combination thereof. In some embodiments, a conductive material layeris deposited over the passivation layer 270 to fill the opening.Afterwards, the conductive material layer is patterned to form the padstructure 272. In some embodiments, the pad structure 272 is used as awire bond pad for forming a wire bond thereon.

In some embodiments, the passivation layer and the conductive featureare formed on the interconnection structure of the substrate (orsemiconductor wafer). However, embodiments of the disclosure are notlimited thereto. In some embodiments, the passivation layer and theconductive feature are formed on the semiconductor substrate of thesubstrate (or semiconductor wafer).

FIG. 3 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. In some embodiments, a passivationlayer 199 is formed on the interconnection structure of the substrate10. Afterwards, the substrate 10 is placed upside down. One or morethrough-substrate vias 186 and one or more dummy through-substrate vias186′ are formed in the semiconductor substrate 100 of the substrate 10.In FIG. 3, only one of the through-substrate vias 186 and one of thedummy through-substrate vias 186′ are shown. Insulating layers 187 areformed between the semiconductor substrate 100 and the through-substratevias 186 (or the dummy through-substrate vias 186′). In someembodiments, the materials and formation methods of thethrough-substrate vias 186, the dummy through-substrate vias 186′, andthe insulating layers 187 are similar to those of the through-substratevias 286 and the insulating layers 287.

Afterwards, the passivation layer 106 is formed on the semiconductorsubstrate 100, as shown in FIG. 3 in accordance with some embodiments.In some embodiments, the passivation layer 106 is formed directly on thesemiconductor substrate 100. The barrier layers 109, the conductivefeatures 108, and the dummy features 108′ are then formed, similar tothe embodiments illustrated in FIG. 1B. Afterwards, processes similar tothose illustrated in FIGS. 1C-1E are performed to form the structureshown in FIG. 3. In the embodiments illustrated in FIG. 3, thesubstrates 10 and 20 are stacked in a “face-to-back” manner.

In some embodiments, one of the conductive features 108 is in directcontact with and directly bonded to one of the conductive lines 204, asshown in FIG. 3. However, many variations and/or modifications can bemade to embodiments of the disclosure. In some other embodiments,similar to the embodiments illustrated in FIGS. 2A-2B, the passivationlayer and the conductive feature are formed on the substrate 20 beforethe bonding process. In these cases, one or some of the conductivefeatures in the passivation layer are in direct contact with anddirectly bonded to one or some of the through-substrate vias 186 formedin the semiconductor substrate 100. In some embodiments, each of theconductive features is electrically connected to one of thethrough-substrate vias 186.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the substrates (or the semiconductorwafers) are stacked in a “back-to-face” manner.

FIG. 4 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. In some embodiments, the passivationlayer 206, the barrier layer 209, the conductive features 208, and thedummy features 208′ are formed on the semiconductor substrate 200 of thesubstrate 20. In some embodiments, the insulating layer 287, thethrough-substrate vias 286 and dummy through-substrate vias 286′ areformed before the formation of the passivation layer 206. Afterwards,similar to the embodiments illustrated in FIGS. 2A-2B, the substrate 20is placed upside down and bonded onto the substrate 10, as shown in FIG.4 in accordance with some embodiments. Afterwards, the first passivationlayer 290, the redistribution layer 288, the second passivation layer292, the UBM layer 294, and the conductive bump 296 are formed over theinterconnection structure of the substrate 20, as shown in FIG. 4 inaccordance with some embodiments.

Many variations and/or modifications can be made to embodiments of thedisclosure. The conductive bump may be replaced with the pad structure.FIG. 5 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. In some embodiments, a structuresimilar to that shown in FIG. 3 is provided. However, the conductivebump is not formed. In some embodiments, the passivation layer 270 andthe pad structure 272 are formed, as shown in FIG. 5.

FIG. 6 is cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. A structure similar to that shown inFIG. 4 is provided. However, the conductive bump is not formed. As shownin FIG. 6, the passivation layer 270 and the pad structure 272 areformed, in accordance with some embodiments.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, more than two semiconductor wafers orsemiconductor dies are stacked.

FIG. 7 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. A structure similar to that shown inFIG. 1D is provided. Afterwards, one or more through-substrate vias 286are formed in the semiconductor substrate 200. In FIG. 7, only one ofthe through-substrate vias 286 is shown. In some embodiments, theinsulating layer 287 is formed to electrically isolate thethrough-substrate vias 286 from the semiconductor substrate 200. In someembodiments, one of the through-substrate vias 286 extends into theinterlayer dielectric layer 202 and is electrically connected to one ofthe conductive lines 204.

Afterwards, a substrate 30 is provided to be bonded over the substrate20, as shown in FIG. 7 in accordance with some embodiments. In someembodiments, the substrate 30 includes a semiconductor wafer, a portionof a semiconductor wafer, or a semiconductor die. The semiconductorwafer (such as a silicon wafer) may contain device elements such activedevices and/or passive devices.

In some embodiments, the substrate 30 includes a semiconductor substrate300 and an interconnection structure formed on the semiconductorsubstrate 300, as shown in FIG. 7. The interconnection structures of thesubstrates 10 and 30 may be similar. The interconnection structureincludes an interlayer dielectric layer 302 and multiple conductivefeatures including conductive lines 304, conductive vias (not shown),and conductive contacts 303. Multiple conductive features such ascontacts (such as conductive contacts 303), conductive vias (not shown),and conductive lines (such as the conductive lines 304) are formed inthe interlayer dielectric layer 202. In some embodiments, barrier layers(such as barrier layers 305) are formed between the conductive featuresand the interlayer dielectric layer 302. In some embodiments, variousdevice elements are formed in the semiconductor substrate 300. Thedevice elements are interconnected through the interconnection structureover the semiconductor substrate 300 to form integrated circuit devices.

As shown in FIG. 7, a passivation layer 306 and one or more conductivefeatures 308 are formed on the substrate 30, in accordance with someembodiments. In FIG. 7, only one of the conductive features 308 isshown. In some embodiments, barrier layers 309 are formed between thepassivation layer 306 and the conductive features 308. In FIG. 7, onlyone of the barrier layers 309 is shown. In some embodiments, thematerials and formation methods of the passivation layer 306, theconductive features 308, and the barrier layers 309 are similar to thoseof the passivation layer 106, the conductive features 108, and thebarrier layers 109. Similar to that shown in FIG. 1C, the substrate 30is then flipped to be bonded onto the substrate 20. In some embodiments,each of the substrates 10, 20, and 30 are semiconductor wafers, and FIG.7 merely shows portions of the semiconductor wafers.

Similar to that shown in FIG. 1D, the substrate 30 is bonded onto thesubstrate 20 through the passivation layer 306 and the conductivefeatures 308, as shown in FIG. 7 in accordance with some embodiments. Insome embodiments, one of the conductive features 308 is in directcontact with and directly bonded to the corresponding one of thethrough-substrate vias 286 formed in the semiconductor substrate 200, asshown in FIG. 7.

In the embodiments illustrated in FIG. 7, the passivation layer 306 andthe conductive features 308 are formed on the substrate 30 before thebonding between the substrates 30 and 20. However, embodiments of thedisclosure are not limited thereto. In some other embodiments, apassivation layer and conductive features formed therein are formed onthe semiconductor substrate 200 and the through-substrate vias 286before the substrate 30 is bonded onto the substrate 20. In these cases,the passivation layer 306 and the conductive features 308 are notformed. The passivation layer is in direct contact with the substrates30 and 20.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the substrates 30 and 20 are stacked ina “back-to-back” manner.

FIG. 8 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. A structure similar to that shown inFIG. 2B is provided. Afterwards, one or more through-substrate vias 286are formed in the semiconductor substrate 200. In FIG. 8, only one ofthe through-substrate vias 286 is shown. In some embodiments, theinsulating layer 287 is formed to electrically isolate thethrough-substrate vias 286 from the semiconductor substrate 200. In someembodiments, one of the through-substrate vias 286 extends into theinterlayer dielectric layer 202 and is electrically connected to one ofthe conductive lines 204.

Afterwards, the substrate 30 is provided to be bonded over the substrate20, as shown in FIG. 8. In some embodiments, one or morethrough-substrate vias 386 are formed in the semiconductor substrate300. In FIG. 8, only one of the through-substrate vias 386 is shown. Insome embodiments, the insulating layer 387 is formed to electricallyisolate the through-substrate vias 386 from the semiconductor substrate300. In some embodiments, one of the through-substrate vias 386 extendsinto the interlayer dielectric layer 202 and is electrically connectedto one of the conductive contacts 303.

In some embodiments, the substrate 30 is bonded onto the substrate 20.In some embodiments, each of the substrates 10, 20, and 30 aresemiconductor wafers, and FIG. 8 merely shows portions of thesemiconductor wafers. In some embodiments, the substrate 30 is bondedonto the substrate 20 through the bonding between the semiconductorsubstrates 300 and 200 and the through-substrate vias 386 and 286, asshown in FIG. 8 in accordance with some embodiments. In someembodiments, one of the through-substrate vias 386 is directly bonded toone of the through-substrate vias 286.

As shown in FIG. 8, the passivation layer 306 and the conductivefeatures 308 are formed on the substrate 30, in accordance with someembodiments. In FIG. 8, only one of the conductive features 308 isshown. In some embodiments, the barrier layers 309 are formed betweenthe passivation layer 306 and the conductive features 308. Anothersubstrate (such as a semiconductor wafer) may be stacked on thepassivation layer 306 and the conductive features 308.

FIG. 9 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. As shown in FIG. 9, a structuresimilar to that shown in FIG. 1D is provided. In some embodiments, thevia holes 107 that contain the conductive features 108 or the dummyfeatures 108′ have slanted sidewalls. In some embodiments, each of thevia holes 107 gradually becomes narrower along a direction extendingfrom one of the conductive lines 204 towards the substrate 10. In someembodiments, the conductive features formed in the interlayer dielectriclayers 102 and 202 also have slanted sidewalls. As shown in FIG. 9, theconductive lines 104 and the conductive contacts 103 have slantedsidewalls. The conductive lines 204 and the conductive contacts 203 alsohave slanted sidewalls.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, one of the stacked substrate is asemiconductor wafer or a semiconductor die that contains image sensordevices. There are light sensing regions formed in one of the stackedsubstrates.

FIGS. 10A-10D are cross-sectional views of various stages of a processfor forming a semiconductor device structure, in accordance with someembodiments. As shown in FIG. 10A, the substrate 20 including thesemiconductor substrate 200, the interlayer dielectric layer 202, andthe conductive lines 204 are provided. In some embodiments, lightsensing regions 502, doped regions 504, and isolation features 506 areformed in the semiconductor substrate 200. In some embodiments, gatestacked 508 are formed over the semiconductor substrate 200 andsurrounded by the interlayer dielectric layer 202. In some embodiments,the doped regions 508 are referred as floating diffusion regions, andthe gate stacks 508 are used as gates of transfer transistors.

In some embodiments, a carrier substrate 590 is bonded onto thesubstrate 20. In some embodiments, the carrier substrate 590 is asemiconductor substrate, a semiconductor wafer, a glass wafer, a ceramicsubstrate, another suitable substrate, or a combination thereof. In someembodiments, the carrier substrate 590 is a semiconductor substrate, anda dielectric film is formed on a surface of the carrier substrate 590before bonding with the substrate 20. The dielectric film may facilitatebonding between the carrier substrate 590 and the substrate 20. In someembodiments, the dielectric film is formed using a CVD process, athermal oxidation process, a spin-on process, another applicableprocess, or a combination thereof.

As shown in FIG. 10B, the structure shown in FIG. 10A is placed upsidedown, and the semiconductor substrate 200 is thinned, in accordance withsome embodiments. Afterwards, through-substrate vias 510 are formed inthe semiconductor substrate 200. Each of the through-substrate vias 510penetrates through the semiconductor substrate 200 and is electricallyconnected to one of the conductive lines 204 in the interlayerdielectric layer 202. In some embodiments, a protection layer 512 isformed over the semiconductor substrate 200 to surround protrudingportions of the through-substrate vias 510. In some embodiments,insulating elements (not shown) are formed between the through-substratevias 510 and the semiconductor substrate 200.

As shown in FIG. 10C, the structure shown in FIG. 10B is placed upsidedown and bonded to a structure similar to that shown in FIG. 1B, inaccordance with some embodiments. Similar to the embodiments mentionedabove, the bonding is achieved using a hybrid bonding. In someembodiments, each of the through-substrate vias 510 is directly bondedto one of the conductive features 108 formed in the passivation layer106. In some embodiments, one of the through-substrate vias 510 is widerthan the corresponding one of the conductive features 108. In someembodiments, one of the through-substrate vias 510 is narrower than thecorresponding one of the conductive features 108.

As shown in FIG. 10D, the carrier substrate 590 is removed from thesubstrate 20, in accordance with some embodiments. In some embodiments,another interlayer dielectric layer 202′ and conductive featuresincluding conductive lines 204′ are formed on the substrate 20. In someembodiments, openings are formed in the interlayer dielectric layers 202and 202′ to expose the light sensing regions 502. Afterwards, atransparent material is formed in the openings to form light pipes 514,as shown in FIG. 10D in accordance with some embodiments. The lightpipes 514 may be used to guide light to the light sensing regions 502.In some embodiments, multiple optical elements (not shown), such ascolor filters and lens, are formed over the light pipes 514. Thestructure shown in FIG. 10D may be used as a front-side illuminated(FSI) image sensor.

FIG. 11 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments. In some embodiments, the protectionlayer 512 is not formed, as shown in FIG. 11. In some embodiments, thesurfaces of the through-substrate vias 510 are substantially coplanarwith the surface of the semiconductor substrate 200. In someembodiments, the passivation layer 106 is directly bonded to thesemiconductor substrate 200, as shown in FIG. 11.

Many variations and/or modifications can be made to embodiments of thedisclosure. For example, the passivation layer and the conductivefeatures are formed on the substrate 20 before bonding with thesubstrate 10.

FIG. 12 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments. In some embodiments, similar to theembodiments shown in FIGS. 2A-2B, the passivation layer 206, theconductive features 208, and the barrier layer 209 are formed on thesubstrate 20 before bonding with the substrate 10. Afterwards, similarto the embodiments shown in FIGS. 2A-2B, the bonding between thesubstrates 10 and 20 is achieved using a hybrid bonding. In someembodiments, the passivation layer 206 is directly bonded to theinterlayer dielectric layer 102. In some embodiments, each of theconductive features 208 is directly bonded to one of the conductivelines 104.

Many variations and/or modifications can be made to embodiments of thedisclosure. For example, embodiments of the disclosure may includeback-side illuminated (BSI) image sensor.

FIGS. 13A-13C are cross-sectional views of various stages of a processfor forming a semiconductor device structure, in accordance with someembodiments. As shown in FIG. 13A, the substrate 20 including the lightsensing regions 502 formed in the semiconductor substrate 200 isprovided. In some embodiments, the passivation layer 206, the conductivefeatures 208, and the barrier layers 209 are formed on theinterconnection structure of the substrate 20. As shown in FIG. 13A, thesubstrate 10 is provided. In some embodiments, the substrate 10 is anapplication specific integrated circuit (ASIC) wafer.

As shown in FIG. 13B, similar to the embodiments shown in FIGS. 2A-2B,the substrates 20 and 10 are bonded using a hybrid bonding. In someembodiments, the passivation layer 206 is directly bonded to theinterlayer dielectric layer 102. In some embodiments, each of theconductive features 208 is directly bonded to one of the conductivelines 104. In some embodiments, after the bonding process, thesemiconductor substrate 200 is thinned. In some embodiments, thesemiconductor substrate 200 is thinned until the light sensing regions502 are exposed or almost exposed. In some embodiments, doped regionsand/or a negatively-charged film are formed on the light sensing regions502 to repair defects formed during the thinning of the semiconductorsubstrate 200.

As shown in FIG. 13C, optical elements are then formed on the lightsensing regions 502 to guide light into the light sensing regions 502,in accordance with some embodiments. In some embodiments, a reflectivegrid 572 and a dielectric layer 570 are formed over the semiconductorsubstrate 200. The reflective grid 572 may be metal grid that is used toreflect light into the light sensing regions 502. In some embodiments, acolor filter film 574 and microlenses 576 are formed over the lightsensing regions 502.

Many variations and/or modifications can be made to embodiments of thedisclosure. For example, the passivation layer and the conductivefeatures are formed on the substrate 10 before bonding with thesubstrate 20.

FIG. 14 is a cross-sectional view of a semiconductor device structure,in accordance with some embodiments. In some embodiments, similar to theembodiments shown in FIGS. 1B-1D, the passivation layer 106, theconductive features 108, and the barrier layer 109 are formed on thesubstrate 10 before bonding with the substrate 20. Afterwards, similarto the embodiments shown in FIGS. 1C-1D, the bonding between thesubstrates 10 and 20 is achieved using a hybrid bonding. In someembodiments, the passivation layer 106 is directly bonded to theinterlayer dielectric layer 202. In some embodiments, each of theconductive features 108 is directly bonded to one of the conductivelines 204.

Embodiments of the disclosure use a passivation layer and conductivefeatures formed in the passivation layer to achieve the bonding betweentwo semiconductor substrates (or semiconductor wafers). The conductivefeatures are used to assist in the bonding process and provideelectrical connections between device elements formed in thesemiconductor substrates (or semiconductor wafers). The formation of theconductive features involves only a single patterning process that isused for forming via holes containing the conductive features. Thenumber of patterning processes is reduced. Therefore, the fabricationcost and time are significantly reduced.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a firstsemiconductor die having a first interlayer dielectric layer and a firstconductive line formed in the first interlayer dielectric layer. Thesemiconductor device structure also includes a second semiconductor diehaving a second interlayer dielectric layer, a second conductive lineformed in the second interlayer dielectric layer, and a first barrierlayer between the second conductive line and the second interlayerdielectric layer. The semiconductor device structure further includes apassivation layer between the first semiconductor die and the secondsemiconductor die, and the passivation layer is directly bonded to thesecond interlayer dielectric layer. In addition, the semiconductordevice structure includes a via hole penetrating through the passivationlayer and a conductive feature in via hole. The conductive feature isdirectly bonded to the second conductive line. The semiconductor devicestructure also includes a second barrier layer between the conductivefeature and the passivation layer. The second barrier layer coverssidewalls of the conductive feature and a surface of the conductivefeature closer to the first semiconductor die than the secondsemiconductor die.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a firstsemiconductor die and a second semiconductor die bonded on the firstsemiconductor die. The semiconductor device structure also includes asecond semiconductor die bonded on the first semiconductor die. Thesemiconductor device structure further includes a passivation layerbetween the first semiconductor die and the second semiconductor die,and the passivation layer is directly bonded to the semiconductorsubstrate of the second semiconductor die. In addition, thesemiconductor device structure includes a via hole penetrating throughthe passivation layer and a conductive feature in via hole. Theconductive feature is bonded to the through-substrate via.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a firstsemiconductor die having a first interlayer dielectric layer, a firstconductive line in the first interlayer dielectric layer, and a firstbarrier layer between the first interlayer dielectric layer and thefirst conductive line. The semiconductor device structure also includesa second semiconductor die stacked on the first semiconductor die havinga second interlayer dielectric layer, a first conductive line in thefirst interlayer dielectric layer, and a second barrier layer betweenthe second interlayer dielectric layer and the second conductive line.The semiconductor device structure further includes a thirdsemiconductor die stacked on the second semiconductor die. In addition,the semiconductor device structure includes a passivation layer betweenthe first semiconductor die and the second semiconductor die. Thepassivation layer is directly bonded to one of the first interlayerdielectric layer and the second interlayer dielectric layer. Thesemiconductor device structure also includes a via hole penetratingthrough the passivation layer and a conductive feature in the via hole.The conductive feature is directly bonded to one of the first conductiveline and the second conductive line. The semiconductor device structurefurther includes a third barrier layer between the conductive featureand the passivation layer. The barrier layer covers sidewalls of theconductive feature and is in direct contact with one of the secondconductive line and the first conductive line.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor device structure, comprising: a first semiconductordie having a first interlayer dielectric layer and a first conductiveline formed in the first interlayer dielectric layer; a secondsemiconductor die having a second interlayer dielectric layer, a secondconductive line formed in the second interlayer dielectric layer, and afirst barrier layer between the second conductive line and the secondinterlayer dielectric layer; a passivation layer between the firstsemiconductor die and the second semiconductor die, wherein thepassivation layer is directly bonded to the second interlayer dielectriclayer; a via hole penetrating through the passivation layer; aconductive feature in via hole, wherein the conductive feature isdirectly bonded to the second conductive line; a second barrier layerbetween the conductive feature and the passivation layer, wherein thesecond barrier layer covers sidewalls of the conductive feature and asurface of the conductive feature closer to the first semiconductor diethan the second semiconductor die closer to the first semiconductor diethan the second semiconductor die; and a through-substrate viapenetrating through a semiconductor substrate of the first semiconductordie, wherein the conductive feature is electrically connected to thethrough-substrate via.
 2. The semiconductor device structure as claimedin claim 1, wherein surfaces of the first conductive line, the firstinterlayer dielectric layer, the second barrier layer, and thepassivation layer are coplanar.
 3. The semiconductor device structure asclaimed in claim 1, wherein surfaces of the passivation layer, theconductive feature, the second barrier layer, the second interlayerdielectric layer, the second conductive line, and the first barrierlayer are coplanar.
 4. The semiconductor device structure as claimed inclaim 1, further comprising a light sensing region in a semiconductorsubstrate of the second semiconductor die.
 5. The semiconductor devicestructure as claimed in claim 1, wherein the second barrier layer is indirect contact with the second conductive line.
 6. (canceled)
 7. Thesemiconductor device structure as claimed in claim 1, wherein theconductive feature is directly bonded to the through-substrate via. 8.semiconductor device structure as claimed in claim 1, wherein theconductive feature is wider than the through-substrate via.
 9. Thesemiconductor device structure as claimed in claim 1, wherein thepassivation layer is directly bonded to the first barrier layer.
 10. Thesemiconductor device structure as claimed in claim 1, wherein the viahole gradually becomes narrower along a direction extending from thesecond conductive line towards the first semiconductor die.
 11. Asemiconductor device structure, comprising: a first semiconductor die; asecond semiconductor die bonded on the first semiconductor die; athrough-substrate via penetrating through a semiconductor substrate ofthe second semiconductor die; a passivation layer between the firstsemiconductor die and the second semiconductor die, wherein thepassivation layer is directly bonded to the semiconductor substrate ofthe second semiconductor die; a via hole penetrating through thepassivation layer; and a conductive feature in via hole, wherein theconductive feature is bonded to the through-substrate via.
 12. Thesemiconductor device structure as claimed in claim 11, wherein surfacesof the passivation layer, the conductive feature, and the semiconductorsubstrate of the second semiconductor die are coplanar.
 13. Thesemiconductor device structure as claimed in claim 11, wherein theconductive feature is wider than the through-substrate via.
 14. Thesemiconductor device structure as claimed in claim 11, furthercomprising a barrier layer between the conductive feature and thepassivation layer, wherein the barrier layer is between the conductivefeature and the through-substrate via.
 15. The semiconductor devicestructure as claimed in claim 11, further comprising a barrier layerbetween the conductive feature and the passivation layer, wherein thebarrier layer is between the conductive feature and the firstsemiconductor die.
 16. A semiconductor device structure, comprising: afirst semiconductor die having a first interlayer dielectric layer, afirst conductive line in the first interlayer dielectric layer, and afirst barrier layer between the first interlayer dielectric layer andthe first conductive line; a second semiconductor die stacked on thefirst semiconductor die having a second interlayer dielectric layer, asecond conductive line in the second interlayer dielectric layer, and asecond barrier layer between the second interlayer dielectric layer andthe second conductive line; a third semiconductor die stacked on thesecond semiconductor die; a passivation layer between the firstsemiconductor die and the second semiconductor die, wherein thepassivation layer is directly bonded to one of the first interlayerdielectric layer and the second interlayer dielectric layer; a via holepenetrating through the passivation layer; a conductive feature in thevia hole, wherein the conductive feature is directly bonded to one ofthe first conductive line and the second conductive line; and a barrierlayer between the conductive feature and the passivation layer, whereinthe barrier layer covers sidewalls of the conductive feature and is indirect contact with one of the second conductive line and the firstconductive line; wherein the barrier layer covers a surface of theconductive feature nearest to the first semiconductor die, the barrierlayer separating the surface of the conductive feature from a nearestneighboring surface of the first semiconductor die.
 17. Thesemiconductor device structure as claimed in claim 16, furthercomprising a through-substrate via penetrating through a semiconductorsubstrate of the second semiconductor die.
 18. The semiconductor devicestructure as claimed in claim 16, further comprising: a secondpassivation layer between the second semiconductor die and the thirdsemiconductor die, wherein the second passivation layer is directlybonded to one of the semiconductor substrate of the second semiconductordie and a semiconductor substrate of the third semiconductor die; asecond via hole penetrating through the second passivation layer; and asecond conductive feature in the second via hole, wherein the secondconductive feature is electrically connected to the through-substratevia.
 19. The semiconductor device structure as claimed in claim 18,wherein the second conductive feature is directly bonded to thethrough-substrate via.
 20. The semiconductor device structure as claimedin claim 17, further comprising a second through-substrate viapenetrating through a semiconductor substrate of the third semiconductordie, wherein the second through-substrate via is directly bonded to thethrough-substrate via penetrating through the semiconductor substrate ofthe second semiconductor die.
 21. The semiconductor device structure ofclaim 11, further comprising: a barrier layer between the conductivefeature and the passivation layer, wherein the barrier layer coverssidewalls of the conductive feature and covers a surface of theconductive feature nearest to the first semiconductor die and closer tothe first semiconductor die than the second semiconductor die, thebarrier layer separating the surface of the conductive feature from anearest neighboring surface of the first semiconductor die.